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TSM3N100CP

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TSM3N100CP Image

The TSM3N100CP from Taiwan Semiconductor is a MOSFET with Continous Drain Current 2.5 A, Drain Source Resistance 5600 to 6000 milliohm, Drain Source Breakdown Voltage 1000 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 3.5 to 5.5 V. Tags: Surface Mount. More details for TSM3N100CP can be seen below.

Product Specifications

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Product Details

  • Part Number
    TSM3N100CP
  • Manufacturer
    Taiwan Semiconductor
  • Description
    1000 V, 19 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    2.5 A
  • Drain Source Resistance
    5600 to 6000 milliohm
  • Drain Source Breakdown Voltage
    1000 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    3.5 to 5.5 V
  • Gate Charge
    19 nC
  • Power Dissipation
    99 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO-252 (D-PAK)
  • Applications
    AC/DC LED Lighting, Power Supply, Power Meter

Technical Documents
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