The TSM4800N15CX6 from Taiwan Semiconductor is a MOSFET with Continous Drain Current 1.4 A, Drain Source Resistance 392 to 520 milliohm, Drain Source Breakdown Voltage 150 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 3.5 V. Tags: Surface Mount. More details for TSM4800N15CX6 can be seen below.