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TSM4936DCS

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TSM4936DCS Image

The TSM4936DCS from Taiwan Semiconductor is a MOSFET with Continous Drain Current 5.9 A, Drain Source Resistance 32 to 53 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 3 V. Tags: Surface Mount. More details for TSM4936DCS can be seen below.

Product Specifications

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Product Details

  • Part Number
    TSM4936DCS
  • Manufacturer
    Taiwan Semiconductor
  • Description
    30 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    5.9 A
  • Drain Source Resistance
    32 to 53 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 3 V
  • Gate Charge
    13 nC
  • Power Dissipation
    2.1 to 3 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOP-8
  • Applications
    High-Side DC/DC Conversion, Notebook, Sever

Technical Documents
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