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TSM4ND65CI

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TSM4ND65CI Image

The TSM4ND65CI from Taiwan Semiconductor is a MOSFET with Continous Drain Current 4 A, Drain Source Resistance 1850 to 2600 milliohm, Drain Source Breakdown Voltage 650 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2.5 to 3.8 V. Tags: Through Hole. More details for TSM4ND65CI can be seen below.

Product Specifications

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Product Details

  • Part Number
    TSM4ND65CI
  • Manufacturer
    Taiwan Semiconductor
  • Description
    650 V, 16.8 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    4 A
  • Drain Source Resistance
    1850 to 2600 milliohm
  • Drain Source Breakdown Voltage
    650 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2.5 to 3.8 V
  • Gate Charge
    16.8 nC
  • Power Dissipation
    41.6 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    ITO-220
  • Applications
    Power Supply, AC/DC LED Lighting

Technical Documents
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