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TSM500P02DCQ

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TSM500P02DCQ Image

The TSM500P02DCQ from Taiwan Semiconductor is a MOSFET with Continous Drain Current -4.7 A, Drain Source Resistance 42 to 85 milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -10 to 10 V, Gate Source Threshold Voltage -0.8 to -0.3 V. Tags: Surface Mount. More details for TSM500P02DCQ can be seen below.

Product Specifications

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Product Details

  • Part Number
    TSM500P02DCQ
  • Manufacturer
    Taiwan Semiconductor
  • Description
    -20 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -4.7 A
  • Drain Source Resistance
    42 to 85 milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -10 to 10 V
  • Gate Source Threshold Voltage
    -0.8 to -0.3 V
  • Gate Charge
    9.6 to 13 nC
  • Power Dissipation
    0.62 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TDFN 2x2
  • Applications
    Battery Pack, Load Switch

Technical Documents
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