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TSM5055DCR (Q1)

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TSM5055DCR (Q1) Image

The TSM5055DCR (Q1) from Taiwan Semiconductor is a MOSFET with Continous Drain Current 38 A, Drain Source Resistance 8.8 to 14.9 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.2 to 2.5 V. Tags: Surface Mount. More details for TSM5055DCR (Q1) can be seen below.

Product Specifications

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Product Details

  • Part Number
    TSM5055DCR (Q1)
  • Manufacturer
    Taiwan Semiconductor
  • Description
    30 V, 4.6 to 9.3 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    38 A
  • Drain Source Resistance
    8.8 to 14.9 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.2 to 2.5 V
  • Gate Charge
    4.6 to 9.3 nC
  • Power Dissipation
    0.4 to 30 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PDFN56 Asymmetric Dual
  • Applications
    IPC, VGA, NB VCORE

Technical Documents
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