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TSM60N06CP

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TSM60N06CP Image

The TSM60N06CP from Taiwan Semiconductor is a MOSFET with Continous Drain Current 66 A, Drain Source Resistance 6.3 to 7.3 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for TSM60N06CP can be seen below.

Product Specifications

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Product Details

  • Part Number
    TSM60N06CP
  • Manufacturer
    Taiwan Semiconductor
  • Description
    60 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    66 A
  • Drain Source Resistance
    6.3 to 7.3 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    81 nC
  • Power Dissipation
    1.3 to 44.6 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO-252 (D-PAK)

Technical Documents
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