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TSM650N15CR

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TSM650N15CR Image

The TSM650N15CR from Taiwan Semiconductor is a MOSFET with Continous Drain Current 24 A, Drain Source Resistance 47 to 80 milliohm, Drain Source Breakdown Voltage 150 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for TSM650N15CR can be seen below.

Product Specifications

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Product Details

  • Part Number
    TSM650N15CR
  • Manufacturer
    Taiwan Semiconductor
  • Description
    150 V, 24 to 36 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    24 A
  • Drain Source Resistance
    47 to 80 milliohm
  • Drain Source Breakdown Voltage
    150 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    24 to 36 nC
  • Power Dissipation
    0.5 to 96 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PDFN56
  • Applications
    PoE, LED Lighting, Telecom Power

Technical Documents
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