The TSM650N15CR from Taiwan Semiconductor is a MOSFET with Continous Drain Current 24 A, Drain Source Resistance 47 to 80 milliohm, Drain Source Breakdown Voltage 150 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for TSM650N15CR can be seen below.