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TSM650P02CX

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The TSM650P02CX from Taiwan Semiconductor is a MOSFET with Continous Drain Current -4.1 A, Drain Source Resistance 52 to 130 milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -10 to 10 V, Gate Source Threshold Voltage -0.8 to -0.4 V. Tags: Surface Mount. More details for TSM650P02CX can be seen below.

Product Specifications

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Product Details

  • Part Number
    TSM650P02CX
  • Manufacturer
    Taiwan Semiconductor
  • Description
    -20 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -4.1 A
  • Drain Source Resistance
    52 to 130 milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -10 to 10 V
  • Gate Source Threshold Voltage
    -0.8 to -0.4 V
  • Gate Charge
    6.4 nC
  • Power Dissipation
    1.56 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23

Technical Documents
View details on the manufacturer's website
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