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TSM680P06CH

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The TSM680P06CH from Taiwan Semiconductor is a MOSFET with Continous Drain Current -14.5 A, Drain Source Resistance 53.2 to 110 milliohm, Drain Source Breakdown Voltage -60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -2.2 to -1.2 V. Tags: Through Hole. More details for TSM680P06CH can be seen below.

Product Specifications

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Product Details

  • Part Number
    TSM680P06CH
  • Manufacturer
    Taiwan Semiconductor
  • Description
    -60 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -14.5 A
  • Drain Source Resistance
    53.2 to 110 milliohm
  • Drain Source Breakdown Voltage
    -60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -2.2 to -1.2 V
  • Gate Charge
    18 nC
  • Power Dissipation
    20.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-251S (I-PAK SL)

Technical Documents
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