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TSM6866SDCA

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TSM6866SDCA Image

The TSM6866SDCA from Taiwan Semiconductor is a MOSFET with Continous Drain Current 6 A, Drain Source Resistance 21 to 40 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.6 V. Tags: Surface Mount. More details for TSM6866SDCA can be seen below.

Product Specifications

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Product Details

  • Part Number
    TSM6866SDCA
  • Manufacturer
    Taiwan Semiconductor
  • Description
    20 V, 7 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    6 A
  • Drain Source Resistance
    21 to 40 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    0.6 V
  • Gate Charge
    7 nC
  • Power Dissipation
    1.6 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TSSOP-8
  • Applications
    Specially Designed for Li-on Battery Packs, Battery Switch Application

Technical Documents
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