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TSM80N08CZ

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TSM80N08CZ Image

The TSM80N08CZ from Taiwan Semiconductor is a MOSFET with Continous Drain Current 80 A, Drain Source Resistance 6 to 8 milliohm, Drain Source Breakdown Voltage 75 V, Gate Source Voltage -25 to 25 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for TSM80N08CZ can be seen below.

Product Specifications

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Product Details

  • Part Number
    TSM80N08CZ
  • Manufacturer
    Taiwan Semiconductor
  • Description
    75 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    80 A
  • Drain Source Resistance
    6 to 8 milliohm
  • Drain Source Breakdown Voltage
    75 V
  • Gate Source Voltage
    -25 to 25 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    91.5 nC
  • Power Dissipation
    1.3 to 113.6 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220

Technical Documents
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