XP151A13A0MR

Note : Your request will be directed to Torex Semiconductor.

The XP151A13A0MR from Torex Semiconductor is a MOSFET with Continous Drain Current 1 A, Drain Source Resistance 75 to 250 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -8 to 8 V, Power Dissipation 0.5 W. Tags: Surface Mount. More details for XP151A13A0MR can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    XP151A13A0MR
  • Manufacturer
    Torex Semiconductor
  • Description
    20 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    1 A
  • Drain Source Resistance
    75 to 250 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -8 to 8 V
  • Power Dissipation
    0.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23
  • Applications
    Notebook PCs, Cellular and portable phones, On-board power supplies, Li-ion battery systems

Technical Documents

Latest MOSFETs

View more products