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XP161A11A1PR-G

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The XP161A11A1PR-G from Torex Semiconductor is a MOSFET with Continous Drain Current 4 A, Drain Source Resistance 50 to 105 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Power Dissipation 2 W. Tags: Surface Mount. More details for XP161A11A1PR-G can be seen below.

Product Specifications

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Product Details

  • Part Number
    XP161A11A1PR-G
  • Manufacturer
    Torex Semiconductor
  • Description
    30 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    4 A
  • Drain Source Resistance
    50 to 105 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Power Dissipation
    2 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-89
  • Applications
    Notebook PCs, Cellular and portable phones, On-board power supplies, Li-ion battery systems

Technical Documents
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