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XP162A12A6PR-G

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The XP162A12A6PR-G from Torex Semiconductor is a MOSFET with Continous Drain Current -2.5 A, Drain Source Resistance 130 to 300 milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -12 to 12 V, Power Dissipation 2 W. Tags: Surface Mount. More details for XP162A12A6PR-G can be seen below.

Product Specifications

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Product Details

  • Part Number
    XP162A12A6PR-G
  • Manufacturer
    Torex Semiconductor
  • Description
    -20 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -2.5 A
  • Drain Source Resistance
    130 to 300 milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -12 to 12 V
  • Power Dissipation
    2 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-89
  • Applications
    Notebook PCs, Cellular and portable phones, On-board power supplies, Li-ion battery systems

Technical Documents
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