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XP263N1001TR-G

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XP263N1001TR-G Image

The XP263N1001TR-G from Torex Semiconductor is a MOSFET with Continous Drain Current 1 A, Drain Source Resistance 180 to 330 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.1 to 2.4 V. Tags: Surface Mount. More details for XP263N1001TR-G can be seen below.

Product Specifications

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Product Details

  • Part Number
    XP263N1001TR-G
  • Manufacturer
    Torex Semiconductor
  • Description
    60 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    1 A
  • Drain Source Resistance
    180 to 330 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.1 to 2.4 V
  • Gate Charge
    3.6 nC
  • Power Dissipation
    0.4 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23(TO-236)
  • Applications
    Switching

Technical Documents
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