The XPJ02N09N8R Series from Torex Semiconductor are N-Channel MOSFETs that are ideal for DC motors, general-purpose inverters, and DC-switching power supply applications. They have a drain-source breakdown voltage of over 100 V, a gate threshold voltage of 2.8 V, and a drain-source on-resistance of less than 9.4 milli-ohms. These MOSFETs have a continuous drain current of up to 59.2 A and a power dissipation of less than 62.5 W. They exhibit high switching speed characteristics with low on-resistance and reverse transfer capacitance. These RoHS-compliant MOSFETs are available in surface-mount packages that measure 6.0 x 4.9 x 1.1 mm.