The 2SJ168 from Toshiba is a P-Channel Enhancement Mode MOSFET that is ideal for high-speed switching, analog switch, and interface applications. It has a drain-source breakdown voltage of over -60 V, a gate threshold voltage of up to -3.5 V, and a drain-source on-resistance of less than 2.0 ohms. The MOSFET has a continuous drain current of up to -200 mA and power dissipation of less than 200 mW. It offers excellent switching time and high forward transfer admittance characteristics. This RoHS-compliant MOSFET is available in a surface-mount package that measures 2.5 x 2.9 x 1.1 mm.