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2SK2009

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The 2SK2009 from Toshiba is a MOSFET with Continous Drain Current 0.2 A, Drain Source Resistance 1200 to 2000 Milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 0.5 to 1.5 V. Tags: Surface Mount. More details for 2SK2009 can be seen below.

Product Specifications

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Product Details

  • Part Number
    2SK2009
  • Manufacturer
    Toshiba
  • Description
    30 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    0.2 A
  • Drain Source Resistance
    1200 to 2000 Milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    0.5 to 1.5 V
  • Power Dissipation
    0.2 W
  • Temperature operating range
    150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-346
  • Applications
    High Speed Switching Applications, Analog Switch Applications

Technical Documents
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