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SSM3J353F

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SSM3J353F Image

The SSM3J353F from Toshiba is a MOSFET with Continous Drain Current -2 A, Drain Source Resistance 125 to 274 Milliohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -25 to 20 V, Gate Source Threshold Voltage -2.2 to -1 V. Tags: Surface Mount. More details for SSM3J353F can be seen below.

Product Specifications

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Product Details

  • Part Number
    SSM3J353F
  • Manufacturer
    Toshiba
  • Description
    -30 V, P-Channel MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -2 A
  • Drain Source Resistance
    125 to 274 Milliohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -25 to 20 V
  • Gate Source Threshold Voltage
    -2.2 to -1 V
  • Gate Charge
    3.4 nC
  • Power Dissipation
    1.2 W
  • Temperature operating range
    150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-346
  • Applications
    Power Management Switches

Technical Documents
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