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SSM3J356R

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SSM3J356R Image

The SSM3J356R from Toshiba is a MOSFET with Continous Drain Current -2 A, Drain Source Resistance 240 to 300 Milliohm, Drain Source Breakdown Voltage -60 V, Gate Source Voltage -20 to 10 V, Gate Source Threshold Voltage -2 to -0.8 V. Tags: Surface Mount. More details for SSM3J356R can be seen below.

Product Specifications

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Product Details

  • Part Number
    SSM3J356R
  • Manufacturer
    Toshiba
  • Description
    -60 V, 8.3 nC, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -2 A
  • Drain Source Resistance
    240 to 300 Milliohm
  • Drain Source Breakdown Voltage
    -60 V
  • Gate Source Voltage
    -20 to 10 V
  • Gate Source Threshold Voltage
    -2 to -0.8 V
  • Gate Charge
    8.3 nC
  • Power Dissipation
    2 W
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23
  • Applications
    Power Management Switches

Technical Documents
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