1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Toshiba
  6. SSM3J375F

SSM3J375F

Download Datasheet Request Quote

Note : Your request will be directed to Toshiba.

SSM3J375F Image

The SSM3J375F from Toshiba is a MOSFET with Continous Drain Current -2 A, Drain Source Resistance 123 to 311 Milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -8 to 6 V, Gate Source Threshold Voltage -1 to -0.3 V. Tags: Surface Mount. More details for SSM3J375F can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    SSM3J375F
  • Manufacturer
    Toshiba
  • Description
    -20 V, 4.6 nC, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -2 A
  • Drain Source Resistance
    123 to 311 Milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -8 to 6 V
  • Gate Source Threshold Voltage
    -1 to -0.3 V
  • Gate Charge
    4.6 nC
  • Power Dissipation
    1.2 W
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    S-Mini
  • Applications
    Power Management Switches

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products