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SSM3K09FU

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SSM3K09FU Image

The SSM3K09FU from Toshiba is a MOSFET with Continous Drain Current 0.4 A, Drain Source Resistance 500 to 1700 Milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.1 to 1.8 V. Tags: Surface Mount. More details for SSM3K09FU can be seen below.

Product Specifications

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Product Details

  • Part Number
    SSM3K09FU
  • Manufacturer
    Toshiba
  • Description
    30 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    0.4 A
  • Drain Source Resistance
    500 to 1700 Milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.1 to 1.8 V
  • Power Dissipation
    0.15 W
  • Temperature operating range
    150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-323
  • Applications
    High Speed Switching Applications

Technical Documents
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