SSM3K121TU

Download Datasheet Request Quote

Note : Your request will be directed to Toshiba.

The SSM3K121TU from Toshiba is a MOSFET with Continous Drain Current 3.2 A, Drain Source Resistance 36 to 140 Milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -10 to 10 V, Gate Source Threshold Voltage 0.35 to 1 V. Tags: Surface Mount. More details for SSM3K121TU can be seen below.

Product Specifications

View similar products

Product Details

Part Number
SSM3K121TU
Manufacturer
Toshiba
Description
20 V, 5.9 nC, N-Channel Enhancement Mode MOSFET

General

Types of MOSFET

N-Channel Enhancement Mode
Transistor Polarity

N-Channel
Number of Channels

Single
Continous Drain Current

3.2 A
Drain Source Resistance

36 to 140 Milliohm
Drain Source Breakdown Voltage

20 V
Gate Source Voltage

-10 to 10 V
Gate Source Threshold Voltage

0.35 to 1 V
Gate Charge

5.9 nC
Power Dissipation

0.8 W
RoHS Compliant

Yes
Package Type

Surface Mount
Package

SOT-323
Applications

Power Management Switch Applications, High-Speed Switching Applications