SSM3K123TU

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The SSM3K123TU from Toshiba is a MOSFET with Continous Drain Current 4.2 A, Drain Source Resistance 19 to 66 Milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -10 to 10 V, Gate Source Threshold Voltage 0.35 to 1 V. Tags: Surface Mount. More details for SSM3K123TU can be seen below.

Product Specifications

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Product Details

Part Number
SSM3K123TU
Manufacturer
Toshiba
Description
20 V, 13.6 nC, N-Channel Enhancement Mode MOSFET

General

Types of MOSFET

N-Channel Enhancement Mode
Transistor Polarity

N-Channel
Number of Channels

Single
Continous Drain Current

4.2 A
Drain Source Resistance

19 to 66 Milliohm
Drain Source Breakdown Voltage

20 V
Gate Source Voltage

-10 to 10 V
Gate Source Threshold Voltage

0.35 to 1 V
Gate Charge

13.6 nC
Power Dissipation

0.8 W
RoHS Compliant

Yes
Package Type

Surface Mount
Package

SOT-323
Applications

Power Management Switch Applications, High-Speed Switching Applications