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SSM3K131TU

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SSM3K131TU Image

The SSM3K131TU from Toshiba is a MOSFET with Continous Drain Current 6 A, Drain Source Resistance 20.5 to 41.5 Milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.3 to 2.5 V. Tags: Surface Mount. More details for SSM3K131TU can be seen below.

Product Specifications

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Product Details

  • Part Number
    SSM3K131TU
  • Manufacturer
    Toshiba
  • Description
    30 V, 10.1 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    6 A
  • Drain Source Resistance
    20.5 to 41.5 Milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.3 to 2.5 V
  • Gate Charge
    10.1 nC
  • Power Dissipation
    0.8 W
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-323
  • Applications
    High Speed Switching Applications

Technical Documents
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