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SSM3K2615TU

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SSM3K2615TU Image

The SSM3K2615TU from Toshiba is a MOSFET with Continous Drain Current 2 A, Drain Source Resistance 230 to 580 Milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 0.8 to 2 V. Tags: Surface Mount. More details for SSM3K2615TU can be seen below.

Product Specifications

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Product Details

  • Part Number
    SSM3K2615TU
  • Manufacturer
    Toshiba
  • Description
    60 V, 6 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    2 A
  • Drain Source Resistance
    230 to 580 Milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    0.8 to 2 V
  • Gate Charge
    6 nC
  • Power Dissipation
    1.6 W
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-323
  • Applications
    Load Switches, Motor Drivers

Technical Documents
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