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SSM3K318R

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SSM3K318R Image

The SSM3K318R from Toshiba is a MOSFET with Continous Drain Current 2.5 A, Drain Source Resistance 83.5 to 145 Milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.8 to 2.8 V. Tags: Surface Mount. More details for SSM3K318R can be seen below.

Product Specifications

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Product Details

  • Part Number
    SSM3K318R
  • Manufacturer
    Toshiba
  • Description
    60 V, 7 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    2.5 A
  • Drain Source Resistance
    83.5 to 145 Milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.8 to 2.8 V
  • Gate Charge
    7 nC
  • Power Dissipation
    2 W
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23
  • Applications
    Load Switches, Ultra-High-Speed Switching

Technical Documents
View details on the manufacturer's website
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