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SSM3K329R

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SSM3K329R Image

The SSM3K329R from Toshiba is a MOSFET with Continous Drain Current 3.5 A, Drain Source Resistance 96 to 289 Milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.4 to 1 V. Tags: Surface Mount. More details for SSM3K329R can be seen below.

Product Specifications

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Product Details

  • Part Number
    SSM3K329R
  • Manufacturer
    Toshiba
  • Description
    2 W, 30 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    3.5 A
  • Drain Source Resistance
    96 to 289 Milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    0.4 to 1 V
  • Gate Charge
    1.5 nC
  • Power Dissipation
    2 W
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23
  • Applications
    Power Management Switches, High-Speed Switching

Technical Documents
View details on the manufacturer's website
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