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SSM3K337R

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SSM3K337R Image

The SSM3K337R from Toshiba is a MOSFET with Continous Drain Current 2 A, Drain Source Resistance 135 to 200 Milliohm, Drain Source Breakdown Voltage 38 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 0.7 to 1.2 V. Tags: Surface Mount. More details for SSM3K337R can be seen below.

Product Specifications

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Product Details

  • Part Number
    SSM3K337R
  • Manufacturer
    Toshiba
  • Description
    38 V, 3 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    2 A
  • Drain Source Resistance
    135 to 200 Milliohm
  • Drain Source Breakdown Voltage
    38 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    0.7 to 1.2 V
  • Gate Charge
    3 nC
  • Power Dissipation
    2 W
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23
  • Applications
    Relay Drivers

Technical Documents
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