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SSM3K339R

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SSM3K339R Image

The SSM3K339R from Toshiba is a MOSFET with Continous Drain Current 2 A, Drain Source Resistance 145 to 390 Milliohm, Drain Source Breakdown Voltage 40 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.85 to 1.2 V. Tags: Surface Mount. More details for SSM3K339R can be seen below.

Product Specifications

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Product Details

  • Part Number
    SSM3K339R
  • Manufacturer
    Toshiba
  • Description
    2 W, 40 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    2 A
  • Drain Source Resistance
    145 to 390 Milliohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    0.85 to 1.2 V
  • Gate Charge
    1.1 nC
  • Power Dissipation
    2 W
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23
  • Applications
    Power Management Switches, DC-DC Converters

Technical Documents
View details on the manufacturer's website
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