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SSM3K56ACT

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SSM3K56ACT Image

The SSM3K56ACT from Toshiba is a MOSFET with Continous Drain Current 1.4 A, Drain Source Resistance 186 to 840 Milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage 0.4 to 1 V. Tags: Surface Mount. More details for SSM3K56ACT can be seen below.

Product Specifications

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Product Details

  • Part Number
    SSM3K56ACT
  • Manufacturer
    Toshiba
  • Description
    0.5 W, 20 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    1.4 A
  • Drain Source Resistance
    186 to 840 Milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    0.4 to 1 V
  • Gate Charge
    1 nC
  • Power Dissipation
    0.5 W
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-883
  • Applications
    High-Speed Switching

Technical Documents
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