The SSM6J213FE from Toshiba is a MOSFET with Continous Drain Current -2.6 A, Drain Source Resistance 88.5 to 250 Milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage -1 to -0.3 V. Tags: Surface Mount. More details for SSM6J213FE can be seen below.