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SSM6J401TU

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SSM6J401TU Image

The SSM6J401TU from Toshiba is a MOSFET with Continous Drain Current -2.5 A, Drain Source Resistance 53 to 145 Milliohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -2.6 to -1.2 V. Tags: Surface Mount. More details for SSM6J401TU can be seen below.

Product Specifications

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Product Details

  • Part Number
    SSM6J401TU
  • Manufacturer
    Toshiba
  • Description
    -30 V, 16 nC, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -2.5 A
  • Drain Source Resistance
    53 to 145 Milliohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -2.6 to -1.2 V
  • Gate Charge
    16 nC
  • Power Dissipation
    0.5 W
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-363
  • Applications
    DC-DC converter Applications, High-Speed Switching Applications

Technical Documents
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