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SSM6J410TU

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SSM6J410TU Image

The SSM6J410TU from Toshiba is a MOSFET with Continous Drain Current -2.1 A, Drain Source Resistance 165 to 393 Milliohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -2 to -0.8 V. Tags: Surface Mount. More details for SSM6J410TU can be seen below.

Product Specifications

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Product Details

  • Part Number
    SSM6J410TU
  • Manufacturer
    Toshiba
  • Description
    -30 V, 2.9 nC, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -2.1 A
  • Drain Source Resistance
    165 to 393 Milliohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -2 to -0.8 V
  • Gate Charge
    2.9 nC
  • Power Dissipation
    1 W
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-363
  • Applications
    Power Management Switch Applications, High-Speed Switching Applications

Technical Documents
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