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SSM6J503NU

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The SSM6J503NU from Toshiba is a MOSFET with Continous Drain Current -6 A, Drain Source Resistance 27.7 to 89.6 Milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage -1 to -0.3 V. Tags: Surface Mount. More details for SSM6J503NU can be seen below.

Product Specifications

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Product Details

  • Part Number
    SSM6J503NU
  • Manufacturer
    Toshiba
  • Description
    2 W, -20 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -6 A
  • Drain Source Resistance
    27.7 to 89.6 Milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    -1 to -0.3 V
  • Gate Charge
    12.8 nC
  • Power Dissipation
    2 W
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-1220
  • Applications
    Power Management Switch Applications

Technical Documents
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