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SSM6J511NU

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The SSM6J511NU from Toshiba is a MOSFET with Continous Drain Current -14 A, Drain Source Resistance 6.5 to 19.2 Milliohm, Drain Source Breakdown Voltage -12 V, Gate Source Voltage -10 to 10 V, Gate Source Threshold Voltage -0.3 to -1 V. Tags: Surface Mount. More details for SSM6J511NU can be seen below.

Product Specifications

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Product Details

  • Part Number
    SSM6J511NU
  • Manufacturer
    Toshiba
  • Description
    2.5 W, -12 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -14 A
  • Drain Source Resistance
    6.5 to 19.2 Milliohm
  • Drain Source Breakdown Voltage
    -12 V
  • Gate Source Voltage
    -10 to 10 V
  • Gate Source Threshold Voltage
    -0.3 to -1 V
  • Gate Charge
    47 nC
  • Power Dissipation
    2.5 W
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-1220
  • Applications
    Power Management Switches

Technical Documents
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