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SSM6J771G

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SSM6J771G Image

The SSM6J771G from Toshiba is a MOSFET with Continous Drain Current -5 A, Drain Source Resistance 23 to 47.5 Milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage -1.2 to -0.5 V. Tags: Surface Mount. More details for SSM6J771G can be seen below.

Product Specifications

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Product Details

  • Part Number
    SSM6J771G
  • Manufacturer
    Toshiba
  • Description
    5 W, -20 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -5 A
  • Drain Source Resistance
    23 to 47.5 Milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    -1.2 to -0.5 V
  • Gate Charge
    9.8 nC
  • Power Dissipation
    5 W
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    WCSP6C
  • Applications
    BATFETs, Power Management Switches

Technical Documents
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