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SSM6K217FE

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SSM6K217FE Image

The SSM6K217FE from Toshiba is a MOSFET with Continous Drain Current 1.8 A, Drain Source Resistance 155 to 400 Milliohm, Drain Source Breakdown Voltage 40 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.5 to 1.2 V. Tags: Surface Mount. More details for SSM6K217FE can be seen below.

Product Specifications

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Product Details

  • Part Number
    SSM6K217FE
  • Manufacturer
    Toshiba
  • Description
    0.5 W, 40 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    1.8 A
  • Drain Source Resistance
    155 to 400 Milliohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    0.5 to 1.2 V
  • Gate Charge
    1.1 nC
  • Power Dissipation
    0.5 W
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-563
  • Applications
    Power Management Switches, DC-DC Converters

Technical Documents
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