1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Toshiba
  6. SSM6K361NU

SSM6K361NU

Download Datasheet Request Quote

Note : Your request will be directed to Toshiba.

SSM6K361NU Image

The SSM6K361NU from Toshiba is a MOSFET with Continous Drain Current 3.5 A, Drain Source Resistance 51 to 92 Milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.5 to 2.5 V. Tags: Surface Mount. More details for SSM6K361NU can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    SSM6K361NU
  • Manufacturer
    Toshiba
  • Description
    2.5 W, 100 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    3.5 A
  • Drain Source Resistance
    51 to 92 Milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.5 to 2.5 V
  • Gate Charge
    3.2 nC
  • Power Dissipation
    2.5 W
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    UDFN6B
  • Applications
    Power Management Switches, DC-DC Converters

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products