SSM6K405TU

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The SSM6K405TU from Toshiba is a MOSFET with Continous Drain Current 2 A, Drain Source Resistance 90 to 307 Milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -10 to 10 V, Gate Source Threshold Voltage 0.35 to 1 V. Tags: Surface Mount. More details for SSM6K405TU can be seen below.

Product Specifications

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Product Details

Part Number
SSM6K405TU
Manufacturer
Toshiba
Description
0.5 W, 20 V, N-Channel Enhancement Mode MOSFET

General

Types of MOSFET

N-Channel Enhancement Mode
Transistor Polarity

N-Channel
Number of Channels

Single
Continous Drain Current

2 A
Drain Source Resistance

90 to 307 Milliohm
Drain Source Breakdown Voltage

20 V
Gate Source Voltage

-10 to 10 V
Gate Source Threshold Voltage

0.35 to 1 V
Gate Charge

3.4 nC
Power Dissipation

0.5 W
RoHS Compliant

Yes
Package Type

Surface Mount
Package

SOT-363
Applications

High-Speed Switching Applications, Power Management Switch Applications