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SSM6K406TU

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SSM6K406TU Image

The SSM6K406TU from Toshiba is a MOSFET with Continous Drain Current 4.4 A, Drain Source Resistance 18 to 38.5 Milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.3 to 2.5 V. Tags: Surface Mount. More details for SSM6K406TU can be seen below.

Product Specifications

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Product Details

  • Part Number
    SSM6K406TU
  • Manufacturer
    Toshiba
  • Description
    30 V, 12.4 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    4.4 A
  • Drain Source Resistance
    18 to 38.5 Milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.3 to 2.5 V
  • Gate Charge
    12.4 nC
  • Power Dissipation
    0.5 W
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-363
  • Applications
    High-Speed Switching Applications

Technical Documents
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