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SSM6K504NU

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SSM6K504NU Image

The SSM6K504NU from Toshiba is a MOSFET with Continous Drain Current 9 A, Drain Source Resistance 14 to 26 Milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.3 to 2.5 V. Tags: Surface Mount. More details for SSM6K504NU can be seen below.

Product Specifications

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Product Details

  • Part Number
    SSM6K504NU
  • Manufacturer
    Toshiba
  • Description
    30 V, 4.8 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    9 A
  • Drain Source Resistance
    14 to 26 Milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.3 to 2.5 V
  • Gate Charge
    4.8 nC
  • Power Dissipation
    2.5 W
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    UDFN6B
  • Applications
    High-Speed Switching

Technical Documents
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