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SSM6K514NU

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SSM6K514NU Image

The SSM6K514NU from Toshiba is a MOSFET with Continous Drain Current 12 A, Drain Source Resistance 8.9 to 17.3 Milliohm, Drain Source Breakdown Voltage 40 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.4 to 2.4 V. Tags: Surface Mount. More details for SSM6K514NU can be seen below.

Product Specifications

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Product Details

  • Part Number
    SSM6K514NU
  • Manufacturer
    Toshiba
  • Description
    2.5 W, 40 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    12 A
  • Drain Source Resistance
    8.9 to 17.3 Milliohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.4 to 2.4 V
  • Gate Charge
    7.5 nC
  • Power Dissipation
    2.5 W
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    UDFN6B
  • Applications
    Power Management Switches

Technical Documents
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