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SSM6K516NU

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The SSM6K516NU from Toshiba is a MOSFET with Continous Drain Current 6 A, Drain Source Resistance 33 to 64 Milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -12 to 20 V, Gate Source Threshold Voltage 1.3 to 2.5 V. Tags: Surface Mount. More details for SSM6K516NU can be seen below.

Product Specifications

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Product Details

  • Part Number
    SSM6K516NU
  • Manufacturer
    Toshiba
  • Description
    2.5 W, 30 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    6 A
  • Drain Source Resistance
    33 to 64 Milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -12 to 20 V
  • Gate Source Threshold Voltage
    1.3 to 2.5 V
  • Gate Charge
    2.5 nC
  • Power Dissipation
    2.5 W
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    UDFN6B
  • Applications
    Power Management Switches, High-Speed Switching

Technical Documents
View details on the manufacturer's website
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