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SSM6K781G

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SSM6K781G Image

The SSM6K781G from Toshiba is a MOSFET with Continous Drain Current 7 A, Drain Source Resistance 14.4 to 124 Milliohm, Drain Source Breakdown Voltage 12 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage 0.4 to 1 V. Tags: Surface Mount. More details for SSM6K781G can be seen below.

Product Specifications

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Product Details

  • Part Number
    SSM6K781G
  • Manufacturer
    Toshiba
  • Description
    2.9 W, 12 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    7 A
  • Drain Source Resistance
    14.4 to 124 Milliohm
  • Drain Source Breakdown Voltage
    12 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    0.4 to 1 V
  • Gate Charge
    5.4 nC
  • Power Dissipation
    2.9 W
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    WCSP6C
  • Applications
    Power Management Switches

Technical Documents
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