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SSM6K818R

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SSM6K818R Image

The SSM6K818R from Toshiba is a MOSFET with Continous Drain Current 15 A, Drain Source Resistance 6.5 to 12 Milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.1 to 2.1 V. Tags: Surface Mount. More details for SSM6K818R can be seen below.

Product Specifications

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Product Details

  • Part Number
    SSM6K818R
  • Manufacturer
    Toshiba
  • Description
    30 V, 7.5 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    15 A
  • Drain Source Resistance
    6.5 to 12 Milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.1 to 2.1 V
  • Gate Charge
    7.5 nC
  • Power Dissipation
    3 W
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TSOP6F
  • Applications
    Power Management Switches, DC-DC Converters

Technical Documents
View details on the manufacturer's website
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