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SSM6L12TU

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SSM6L12TU Image

The SSM6L12TU from Toshiba is a MOSFET with Continous Drain Current -0.5 to 0.5 A, Drain Source Resistance 140 to 430 Milliohm, Drain Source Breakdown Voltage -20 to 30 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage -1.1 to 0.5 V. Tags: Surface Mount. More details for SSM6L12TU can be seen below.

Product Specifications

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Product Details

  • Part Number
    SSM6L12TU
  • Manufacturer
    Toshiba
  • Description
    -20 to 30 V, N-Channel Enhancement Mode, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode, P-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel, P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -0.5 to 0.5 A
  • Drain Source Resistance
    140 to 430 Milliohm
  • Drain Source Breakdown Voltage
    -20 to 30 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    -1.1 to 0.5 V
  • Power Dissipation
    0.5 W
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-363
  • Applications
    High-Speed Switching Applications

Technical Documents
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