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SSM6L36FE

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SSM6L36FE Image

The SSM6L36FE from Toshiba is a MOSFET with Continous Drain Current -0.33 to 0.5 A, Drain Source Resistance 460 to 3600 Milliohm, Drain Source Breakdown Voltage -20 to 20 V, Gate Source Voltage -10 to 10 V, Gate Source Threshold Voltage -1 to 0.35 V. Tags: Surface Mount. More details for SSM6L36FE can be seen below.

Product Specifications

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Product Details

  • Part Number
    SSM6L36FE
  • Manufacturer
    Toshiba
  • Description
    -20 to 20 V, 1.23 nC, N-Channel Enhancement Mode, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode, P-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel, P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -0.33 to 0.5 A
  • Drain Source Resistance
    460 to 3600 Milliohm
  • Drain Source Breakdown Voltage
    -20 to 20 V
  • Gate Source Voltage
    -10 to 10 V
  • Gate Source Threshold Voltage
    -1 to 0.35 V
  • Gate Charge
    1.23 nC
  • Power Dissipation
    0.15 W
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-363
  • Applications
    High-Speed Switching Applications

Technical Documents
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