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SSM6N16FE

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SSM6N16FE Image

The SSM6N16FE from Toshiba is a MOSFET with Continous Drain Current 0.1 A, Drain Source Resistance 1500 to 15000 Milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -10 to 10 V, Gate Source Threshold Voltage 0.6 to 1.1 V. Tags: Surface Mount. More details for SSM6N16FE can be seen below.

Product Specifications

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Product Details

  • Part Number
    SSM6N16FE
  • Manufacturer
    Toshiba
  • Description
    0.15 W, 20 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    0.1 A
  • Drain Source Resistance
    1500 to 15000 Milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -10 to 10 V
  • Gate Source Threshold Voltage
    0.6 to 1.1 V
  • Power Dissipation
    0.15 W
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-563
  • Applications
    High Speed Switching Applications, Analog Switching Applications

Technical Documents
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